dm g1013t new product p - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25 c - 2 0 v 7 0 0m @ v gs = - 4.5 v - 460ma 9 0 0m @ v gs = - 2.5v - 420ma 1 3 00m @ v gs = - 1.8v - 350ma features and benefits ? low on - resistance ? low gate thresho ld voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 3kv ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high reliab ility description and applications this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? dc- dc converters ? load s witch ? power m anagement f unctions mechanical data ? case: sot523 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.002 grams (approximate) ordering information (note 3 ) part number case packaging dmg1013t - 7 sot523 3000/tape & reel note s: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.htmlfor more information about diodes incorporated?s definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http:/ /www.diodes.com/products/packages.html. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 201 6 201 7 code w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot523 t op view equivalent circuit t op view g s d pa1 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) pa1 ym source gate protection diode gate drain esd protected to 3kv dm g1013t document number: ds3 1784 rev. 6 - 2 1 of 6 www.diodes.com august 2014 ? diodes inc orporated
dm g1013t new product maximu m ratings @t a = + 25 c unless otherwise specified characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 6 v drain current (note 5 ) steady state t a = + 25 c t a = + 85 c i d - 0.4 6 - 0.3 3 a pulsed drain current (note 6 ) i dm - 6 a thermal characteristics @t a = + 25c unless otherwise specified characteristic symbol value units total power dissipation (note 5 ) p d 0. 27 w thermal resistance, junction to ambient (note 5 ) r electrical characteristics @t a = + 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source bre akdown voltage bv dss - 20 - - v v gs = 0v, i d = - 250a on characteristics (note 7 ) gate threshold volta ge v gs(th) - 0.5 - - 1.0 v v ds = v gs , i d = - 250 a v gs = - 4.5v, i d = - 350ma 0.7 0.9 v gs = - 2.5v, i d = - 300ma 1.0 1.3 v gs = - 1.8v, i d = - 150ma forward transfer admittance |y fs | - 0.9 - s v ds = - 10 v, i d = - 250ma diode forward voltage v sd - 0.8 - 1.2 v v gs = 0v, i s = - 150ma dynamic characteristics (note 8 ) input capacitance c iss - 59.76 - pf v ds = - 16 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 12.07 - pf reverse transfer capacitance c rss - 6.36 - pf total gate charge q g - 580 - p c v gs = - 4.5 v, v ds = - 10 v, i d = - 250m a gate - source charge q gs - 10 4 - p c gate - drain charge q gd - 1 25 - p c turn - on delay time t d(on) - 5.1 - ns v dd = - 10 v, v gs = - 4. 5 v, r l = 47 , r g = 10 , i d = - 200ma turn - on rise time t r - 8.1 - ns turn - off delay time t d(off) - 28.4 - ns turn - off fall time t f - 20.7 - ns notes: 5 . for a device surface mounted on a minimum recommended pad layout of an fr4 pcb, in sti ll air conditions; the device is measured when operating in steady - state condition. 6 . same as note 5 , except the device is pulsed at duty cycle of 1% for a pulse width of 10 s. 7 . measured under pulsed conditions to minimize self - heating effect. pul se width 300 s; duty cycle 2% . 8 . for design aid only, not subject to production testing. dm g1013t document number: ds3 1784 rev. 6 - 2 2 of 6 www.diodes.com august 2014 ? diodes inc orporated
dm g1013t new product 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 fig. 1 typical output characteristic -v , drain-source voltage (v) ds - i , d r a i n c u r r e n t ( a ) d v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -4.5v gs v = -8.0v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic -v , gate-source voltage (v) gs 0 2 4 6 8 10 - i , d r a i n c u r r en t (a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.3 0.6 0.9 1.2 1.5 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r ai n -so u r c e o n -r esi s t an c e ( ) d s ( o n ) ? ? -i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n -so u r c e o n -r esi st an c e (n o r m al i z ed ) d s o n v = -4.5v i = -1.0a gs d v = -2.5v i = -500ma gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n -so u r c e o n -r e si st an c e ( ) d s o n ? www.diodes.com august 2014 ? diodes inc orporated
dm g1013t new product fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.4 0.8 1.2 1.6 - v , g a t e t h r esh o l d vo l t ag e (v) g s ( t h ) i = -1ma d i = -250a d 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current -v , source-drain voltage (v) sd 0 2 4 6 8 10 - i , so u r c e c u r r en t (a ) s t = 25c a 1 10 100 0 5 10 15 20 fig. 9 typical total capacitance -v , drain-source voltage (v) ds c , c ap ac i t an c e (p f ) c iss c rss c oss f = 1mhz 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1.0 q , total gate charge (nc) fig. 10 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0.00001 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r(t ), t r an si en t t h er m al r esi s t an c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 r (t) = r(t) * ja r r = 504c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 dm g1013t document number: ds3 1784 rev. 6 - 2 4 of 6 www.diodes.com august 2014 ? diodes inc orporated
dm g1013t new product package outline dimensions please see ap02002 at http://w ww.diodes.com/datasheets/ap02002 .pdf for lates t version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. sot523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d ? ? g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 ? all dimensions in mm dimensions value (in mm) z 1.8 x 0.4 y 0.51 c 1.3 e 0.7 x e y c z a m j l d b c h k g n dm g1013t document number: ds3 1784 rev. 6 - 2 5 of 6 www.diodes.com august 2014 ? diodes inc orporated
dm g1013t new product important notice diodes incorporat ed makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any l iability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or p roducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpo rated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales cha nnel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products a re specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the label ing can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support th at may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or syst ems. copyright ? 201 4 , diodes incorporated www.diodes.com dm g1013t document number: ds3 1784 rev. 6 - 2 6 of 6 www.diodes.com august 2014 ? diodes inc orporated
|
